SiS106DN-T1-GE3 N-Channel MOSFET, 16 A, 60 V TrenchFET, 8-Pin 1212 Vishay Siliconix [SiS106DN-T1-GE3]; 178-3692
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Mã kho: 1783692
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 16 A |
Maximum Drain Source Voltage | 60 V |
Package Type | 1212 |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 20 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 4V |
Maximum Power Dissipation | 24 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 8.9 nC @ 10 V |
Height | 1.07mm |
Series | TrenchFET |
Width | 3.15mm |
Length | 3.15mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |