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SIHA2N80E-GE3 N-Channel MOSFET, 2.8 A, 800 V E-Series, 3-Pin TO-220 Vishay Siliconix [SIHA2N80E-GE3]; 178-3907
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Mã kho: 1783907
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 2.8 A |
Maximum Drain Source Voltage | 800 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 2.75 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 29 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Length | 10.3mm |
Series | E-Series |
Height | 15.3mm |
Forward Diode Voltage | 1.2V |
Maximum Operating Temperature | +150 °C |
Width | 4.7mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 9.8 nC @ 10 V |