EF Series Power MOSFET With Fast Body Di [SIHA22N60EF-GE3]; 188-4973
by Vishay
0₫
Mã kho: 1884973
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 19 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 182 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 33 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Forward Diode Voltage | 1.2V |
Width | 4.7mm |
Minimum Operating Temperature | -55 °C |
Length | 10.3mm |
Height | 15.3mm |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 48 nC @ 10 V |