SIA429DJT-T1-GE3 P-Channel MOSFET, 8.5 A, 20 V, 6-Pin PowerPAK SC-70 Vishay [SIA429DJT-T1-GE3]; 818-1450
by Vishay
0₫
Mã kho: 8181450
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 8.5 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | PowerPAK SC-70 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 60 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 19 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Width | 2.15mm |
| Height | 0.6mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 41 nC @ 8 V |
| Length | 2.15mm |