SI2365EDS-T1-GE3 P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay [SI2365EDS-T1-GE3]; 165-6934
by Vishay
0₫
Mã kho: 1656934
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4.7 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-23 (TO-236) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 67.5 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Height | 1.02mm |
| Minimum Operating Temperature | -50 °C |
| Width | 1.4mm |
| Length | 3.04mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 23.8 nC @ 8 V |