SI1902CDL-T1-GE3 N-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay [SI1902CDL-T1-GE3]; 146-4435
by Vishay
0₫
Mã kho: 1464435
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.1 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 306 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 0.42 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 12 V |
| Number of Elements per Chip | 1 |
| Height | 1mm |
| Typical Gate Charge @ Vgs | 2 nC |
| Maximum Operating Temperature | +150 °C |
| Length | 2.2mm |
| Width | 2.4mm |
| Minimum Operating Temperature | -55 °C |