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TK9A65W,S5X(M N-Channel MOSFET, 9.3 A, 650 V DTMOSIV, 3-Pin TO-220SIS Toshiba [TK9A65W,S5X(M]; 125-0600
by Toshiba
0₫
Mã kho: 1250600
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 9.3 A |
Maximum Drain Source Voltage | 650 V |
Package Type | TO-220SIS |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 500 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 30 W |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 4.5mm |
Height | 15mm |
Series | DTMOSIV |
Typical Gate Charge @ Vgs | 20 nC @ 10 V |
Length | 10mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Forward Diode Voltage | 1.7V |