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TK8P60W5,RVQ(S N-Channel MOSFET, 8 A, 600 V DTMOSIV, 3-Pin DPAK Toshiba [TK8P60W5,RVQ(S]; 133-2804
by Toshiba
0₫
Mã kho: 1332804
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.333333333333333 |
Maximum Drain Source Voltage | 600 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 560 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 80 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Series | DTMOSIV |
Width | 6.1mm |
Length | 6.6mm |
Maximum Operating Temperature | +150 °C |
Forward Diode Voltage | 1.7V |
Height | 2.3mm |
Typical Gate Charge @ Vgs | 22 nC @ 10 V |