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TK62N60X,S1F(S N-Channel MOSFET, 61.8 A, 600 V DTMOSIV-H, 3-Pin TO-247 Toshiba [TK62N60X,S1F(S]; 125-0586
by Toshiba
0₫
Mã kho: 1250586
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 61.8 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 40 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 400 W |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Series | DTMOSIV-H |
Width | 5.02mm |
Height | 20.95mm |
Typical Gate Charge @ Vgs | 135 nC @ 10 V |
Length | 15.94mm |
Transistor Material | Si |
Forward Diode Voltage | 1.7V |
Maximum Operating Temperature | +150 °C |