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TK58E06N1,S1X(S N-Channel MOSFET, 105 A, 60 V U-MOSVIII-H, 3-Pin TO-220 Toshiba [TK58E06N1,S1X(S]; 125-0579
by Toshiba
0₫
Mã kho: 1250579
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 105 A |
Maximum Drain Source Voltage | 60 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 5.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 110 W |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 4.45mm |
Height | 15.1mm |
Series | U-MOSVIII-H |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 46 nC @ 10 V |
Length | 10.16mm |
Transistor Material | Si |
Forward Diode Voltage | 1.2V |