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TK17C65W,S1Q(S2 N-Channel MOSFET, 17.3 A, 650 V DTMOSIV, 3-Pin I2PAK Toshiba [TK17C65W,S1Q(S2]; 125-0546
by Toshiba
0₫
Mã kho: 1250546
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 17.3 A |
Maximum Drain Source Voltage | 650 V |
Package Type | I2PAK (TO-262) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 200 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 165 W |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Series | DTMOSIV |
Forward Diode Voltage | 1.7V |
Length | 10mm |
Typical Gate Charge @ Vgs | 45 nC @ 10 V |
Width | 4.5mm |
Transistor Material | Si |
Height | 10.4mm |
Maximum Operating Temperature | +150 °C |