TK100E10N1,S1X(S N-Channel MOSFET, 207 A, 100 V U-MOSVIII-H, 3-Pin TO-220 Toshiba [TK100E10N1,S1X(S]; 125-0530
by Toshiba
0₫
Mã kho: 1250530
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 207 A |
Maximum Drain Source Voltage | 100 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 3.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 255 W |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 10.16mm |
Width | 4.45mm |
Forward Diode Voltage | 1.2V |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 140 nC @ 10 V |
Series | U-MOSVIII-H |
Height | 15.1mm |