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TSM1NB60CH C5G N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK Taiwan Semi [TSM1NB60CH C5G]; 171-3688
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Mã kho: 1713688
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.0416666666666667 |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-251 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 10 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 39 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Width | 2.3mm |
Forward Diode Voltage | 1.4V |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Height | 6.1mm |
Typical Gate Charge @ Vgs | 6.1 nC @ 10 V |
Length | 6.6mm |