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VNS1NV04DP-E Dual N-Channel MOSFET, 3.5 A, 40 V OMNIFET, 8-Pin SOIC STMicroelectronics [VNS1NV04DP-E]; 917-2797
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Mã kho: 9172797
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 3.5 A |
Maximum Drain Source Voltage | 40 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 500 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 0.5V |
Maximum Power Dissipation | 4 W |
Transistor Configuration | Isolated |
Number of Elements per Chip | 2 |
Forward Diode Voltage | 0.8V |
Series | OMNIFET |
Transistor Material | Si |
Height | 1.5mm |
Typical Gate Charge @ Vgs | 5 nC @ 5 V |
Length | 5mm |
Width | 4mm |