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STB18N60DM2 N-Channel MOSFET, 12 A, 600 V MDmesh DM2, 3-Pin D2PAK STMicroelectronics [STB18N60DM2]; 111-6459
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Mã kho: 1116459
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0 |
Maximum Drain Source Voltage | 600 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 290 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 90 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -25 V, +25 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.6V |
Maximum Operating Temperature | +150 °C |
Series | MDmesh DM2 |
Length | 9.35mm |
Typical Gate Charge @ Vgs | 20 nC @ 10 V |
Width | 10.4mm |
Height | 4.6mm |
Transistor Material | Si |