![STMicroelectronics SCT20N120H 2014415](http://nguyenxuong.com/cdn/shop/products/Y2014415-01_444x424.jpg?v=1594392615)
Silicon carbide Power MOSFET 1200 V, 20 [SCT20N120H]; 201-4415
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Mã kho: 2014415
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | H2PAK-2 |
Pin Count | 3 |
Maximum Drain Source Resistance | 0.203 O |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 239V |
Number of Elements per Chip | 1 |
Series | SiC MOSFET |
Transistor Material | SiC |