SCT2H12NYTB SiC N-Channel MOSFET, 4 A, 1700 V, 2 + Tab-Pin TO-268 ROHM [SCT2H12NYTB]; 148-6940
by ROHM
0₫
Mã kho: 1486940
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.166666666666667 |
| Maximum Drain Source Voltage | 1700 V |
| Package Type | TO-268 |
| Mounting Type | Surface Mount |
| Pin Count | 2 + Tab |
| Maximum Drain Source Resistance | 1.71 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 1.6V |
| Maximum Power Dissipation | 44 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 22 V |
| Number of Elements per Chip | 1 |
| Width | 13.9mm |
| Transistor Material | SiC |
| Length | 15.95mm |
| Forward Diode Voltage | 4.3V |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 14 nC @ 18 V |
| Height | 5mm |