RQ3E100ATTB P-Channel MOSFET, 31 A, 30 V RQ3E100AT, 8-Pin HSMT ROHM [RQ3E100ATTB]; 177-6162
by ROHM
0₫
Mã kho: 1776162
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 31 A |
Maximum Drain Source Voltage | 30 V |
Package Type | HSMT |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 11.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 17 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±20 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.2V |
Width | 3.1mm |
Maximum Operating Temperature | +150 °C |
Series | RQ3E100AT |
Height | 0.9mm |
Length | 3.3mm |
Typical Gate Charge @ Vgs | 42 nC @ 10 V |