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R6011END3TL1 N-Channel MOSFET, 11 A, 600 V R6011END3, 3-Pin DPAK ROHM [R6011END3TL1]; 177-6492
by ROHM
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Mã kho: 1776492
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 0.458333333333333 |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-252 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 390 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 124 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.5V |
Width | 6.4mm |
Height | 2.4mm |
Typical Gate Charge @ Vgs | 32 nC @ 10 V |
Length | 6.8mm |
Series | R6011END3 |