ON Semiconductor NXH50C120L2C2ESG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole [NXH50C120L2C2ESG]; 202-5683
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Mã kho: 2025683
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| .THÔNG SỐ KỸ THUẬT: | |
|---|---|
| Maximum Continuous Collector Current | 35 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20.0V |
| Number of Transistors | 6 |
| Configuration | 3 Phase |