FQB6N80TM N-Channel MOSFET, 5.8 A, 800 V QFET, 3-Pin D2PAK ON Semiconductor [FQB6N80TM]; 671-0927
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Mã kho: 6710927
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 5.8 A |
Maximum Drain Source Voltage | 800 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.95 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 3.13 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Length | 10.67mm |
Minimum Operating Temperature | -55 °C |
Width | 9.65mm |
Height | 4.83mm |
Maximum Operating Temperature | +150 °C |
Series | QFET |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 31 nC @ 10 V |