ON Semiconductor, AFGB40T65SQDN [AFGB40T65SQDN]; 185-8642
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Mã kho: 1858642
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 238 W |
| Number of Transistors | 1 |
| Package Type | D2PAK |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Length | 10.67mm |
| Width | 9.65mm |
| Height | 4.58mm |
| Dimensions | 10.67 x 9.65 x 4.58mm |
| Automotive Standard | AEC-Q101 |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 2495pF |
| Energy Rating | 22.3µJ |
| Minimum Operating Temperature | -55 °C |