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ON Semiconductor, AFGB40T65SQDN [AFGB40T65SQDN]; 185-8642
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Mã kho: 1858642
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THÔNG SỐ KỸ THUẬT | |
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Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 238 W |
Number of Transistors | 1 |
Package Type | D2PAK |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Length | 10.67mm |
Width | 9.65mm |
Height | 4.58mm |
Dimensions | 10.67 x 9.65 x 4.58mm |
Automotive Standard | AEC-Q101 |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 2495pF |
Energy Rating | 22.3µJ |
Minimum Operating Temperature | -55 °C |