IXFN210N30P3 N-Channel MOSFET, 192 A, 300 V HiperFET, Polar3, 4-Pin SOT-227B IXYS [IXFN210N30P3]; 804-7593
by IXYS
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Mã kho: 8047593
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 192 A |
Maximum Drain Source Voltage | 300 V |
Package Type | SOT-227B |
Mounting Type | Panel Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 14.5 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 1.5 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 38.23mm |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 268 nC @ 10 V |
Height | 9.6mm |
Series | HiperFET, Polar3 |
Width | 25.07mm |