IXFN140N20P N-Channel MOSFET, 115 A, 200 V HiperFET, Polar, 4-Pin SOT-227B IXYS [IXFN140N20P]; 193-616
by IXYS
0₫
Mã kho: 193616
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 115 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | SOT-227B |
| Mounting Type | Panel Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 18 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 680 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 38.23mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 240 nC @ 10 V |
| Height | 9.6mm |
| Maximum Operating Temperature | +175 °C |
| Series | HiperFET, Polar |
| Width | 25.42mm |