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IRLU3636PBF N-Channel MOSFET, 99 A, 60 V HEXFET, 3-Pin IPAK Infineon [IRLU3636PBF]; 145-9291
by Infineon
0₫
Mã kho: 1459291
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 99 A |
Maximum Drain Source Voltage | 60 V |
Package Type | IPAK (TO-251) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 8.3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 143 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Width | 2.39mm |
Series | HEXFET |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Length | 6.73mm |
Typical Gate Charge @ Vgs | 33 nC @ 4.5 V |
Height | 7.49mm |