IRFH5210TRPBF N-Channel MOSFET, 10 A, 100 V HEXFET, 8-Pin PQFN Infineon [IRFH5210TRPBF]; 130-0977
by Infineon
0₫
Mã kho: 1300977
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.416666666666667 |
| Maximum Drain Source Voltage | 100 V |
| Package Type | PQFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 14.9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 104 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 6mm |
| Minimum Operating Temperature | -55 °C |
| Height | 0.9mm |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V |
| Series | HEXFET |
| Forward Diode Voltage | 1.3V |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |