IRFB5620PBF N-Channel MOSFET, 25 A, 200 V HEXFET, 3-Pin TO-220AB Infineon [IRFB5620PBF]; 124-9009
by Infineon
0₫
Mã kho: 1249009
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 73 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 14 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Series | HEXFET |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Width | 4.83mm |
| Length | 10.67mm |
| Height | 9.02mm |