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IRFB52N15DPBF N-Channel MOSFET, 51 A, 150 V HEXFET, 3-Pin TO-220AB Infineon [IRFB52N15DPBF]; 165-5782
by Infineon
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Mã kho: 1655782
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 51 A |
Maximum Drain Source Voltage | 150 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 32 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 230 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 4.82mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 60 nC @ 10 V |
Height | 16.51mm |
Maximum Operating Temperature | +175 °C |
Series | HEXFET |
Length | 10.66mm |
Transistor Material | Si |