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IRF7329PBF Dual P-Channel MOSFET, 9.2 A, 12 V HEXFET, 8-Pin SOIC Infineon [IRF7329PBF]; 165-5779
by Infineon
0₫
Mã kho: 1655779
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 9.2 A |
Maximum Drain Source Voltage | 12 V |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 30 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 0.9V |
Minimum Gate Threshold Voltage | 0.4V |
Maximum Power Dissipation | 2 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -8 V, +8 V |
Number of Elements per Chip | 2 |
Transistor Material | Si |
Minimum Operating Temperature | -55 °C |
Width | 4mm |
Typical Gate Charge @ Vgs | 38 nC @ 4.5 V |
Height | 1.5mm |
Series | HEXFET |
Maximum Operating Temperature | +150 °C |
Length | 5mm |