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IRF640NLPBF N-Channel MOSFET, 18 A, 200 V HEXFET, 3-Pin I2PAK Infineon [IRF640NLPBF]; 145-8857
by Infineon
0₫
Mã kho: 1458857
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 18 A |
Maximum Drain Source Voltage | 200 V |
Package Type | I2PAK (TO-262) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 150 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Height | 11.3mm |
Series | HEXFET |
Maximum Operating Temperature | +175 °C |
Length | 10.67mm |
Minimum Operating Temperature | -55 °C |
Width | 4.83mm |
Typical Gate Charge @ Vgs | 67 nC @ 10 V |