IPD30N06S2L23ATMA1 N-Channel MOSFET, 30 A, 55 V OptiMOS, 3-Pin DPAK Infineon [IPD30N06S2L23ATMA1]; 165-5950
by Infineon
0₫
Mã kho: 1655950
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 100 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Series | OptiMOS |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Width | 6.22mm |
| Height | 2.3mm |
| Length | 6.5mm |