IPD30N03S4L14ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon [IPD30N03S4L14ATMA1]; 165-5955
by Infineon
0₫
Mã kho: 1655955
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 30 A |
Maximum Drain Source Voltage | 30 V |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 25 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 31 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Width | 6.22mm |
Length | 6.5mm |
Transistor Material | Si |
Series | OptiMOS T2 |
Height | 2.3mm |
Typical Gate Charge @ Vgs | 11 nC @ 10 V |
Maximum Operating Temperature | +175 °C |