IPB90N06S4L04ATMA2 N-Channel MOSFET, 90 A, 60 V OptiMOS T2, 3-Pin D2PAK Infineon [IPB90N06S4L04ATMA2]; 165-5611
by Infineon
0₫
Mã kho: 1655611
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 90 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5.9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Width | 9.25mm |
| Length | 10mm |
| Series | OptiMOS T2 |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 133 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Height | 4.4mm |