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IPB80N06S2L07ATMA3 N-Channel MOSFET, 80 A, 55 V OptiMOS, 3-Pin D2PAK Infineon [IPB80N06S2L07ATMA3]; 166-1125
by Infineon
0₫
Mã kho: 1661125
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 55 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 10 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 210 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Width | 9.45mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 95 nC @ 10 V |
Height | 4.57mm |
Series | OptiMOS |
Maximum Operating Temperature | +175 °C |
Length | 10.31mm |
Forward Diode Voltage | 1.3V |
Transistor Material | Si |