IPB80N03S4L03ATMA1 N-Channel MOSFET, 80 A, 30 V OptiMOS T2, 3-Pin D2PAK Infineon [IPB80N03S4L03ATMA1]; 165-5313
by Infineon
0₫
Mã kho: 1655313
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 80 A |
Maximum Drain Source Voltage | 30 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 5 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 94 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Number of Elements per Chip | 1 |
Height | 4.572mm |
Series | OptiMOS T2 |
Maximum Operating Temperature | +175 °C |
Length | 10.31mm |
Forward Diode Voltage | 1.3V |
Transistor Material | Si |
Width | 9.45mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 60 nC @ 10 V |