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IPB180P04P4L02ATMA1 P-Channel MOSFET, 180 A, 40 V OptiMOS P, 7-Pin D2PAK Infineon [IPB180P04P4L02ATMA1]; 166-1130
by Infineon
0₫
Mã kho: 1661130
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 180 A |
Maximum Drain Source Voltage | 40 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 7 |
Maximum Drain Source Resistance | 3.9 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2V |
Minimum Gate Threshold Voltage | 1.2V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -16 V, +16 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Width | 9.25mm |
Forward Diode Voltage | 1.3V |
Length | 10mm |
Maximum Operating Temperature | +175 °C |
Series | OptiMOS P |
Typical Gate Charge @ Vgs | 220 nC @ 10 V |
Height | 4.4mm |
Transistor Material | Si |