Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263) [IGB30N60H3ATMA1]; 110-7122
by Infineon
0₫
Mã kho: 1107122
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THÔNG SỐ KỸ THUẬT | |
---|---|
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 187 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3+Tab |
Transistor Configuration | Single |
Length | 10.31mm |
Width | 9.45mm |
Height | 4.57mm |
Dimensions | 10.31 x 9.45 x 4.57mm |
Minimum Operating Temperature | -40 °C |
Energy Rating | 1.55mJ |
Gate Capacitance | 1630pF |
Maximum Operating Temperature | +175 °C |