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BSL308PEH6327XTSA1 Dual P-Channel MOSFET, 2 A, 30 V OptiMOS P, 6-Pin TSOP Infineon [BSL308PEH6327XTSA1]; 165-5552
by Infineon
0₫
Mã kho: 1655552
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 0.0833333333333333 |
Maximum Drain Source Voltage | 30 V |
Package Type | TSOP |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 130 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 500 mW |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 2 |
Series | OptiMOS P |
Height | 1mm |
Typical Gate Charge @ Vgs | 5 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Length | 2.9mm |
Width | 1.6mm |
Forward Diode Voltage | 1.1V |
Transistor Material | Si |