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BSC900N20NS3GATMA1 N-Channel MOSFET, 15.2 A, 200 V OptiMOS 3, 8-Pin TDSON Infineon [BSC900N20NS3GATMA1]; 178-7500
by Infineon
0₫
Mã kho: 1787500
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 15.2 A |
Maximum Drain Source Voltage | 200 V |
Package Type | TDSON |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 90 mΩ |
Channel Mode | Enhancement |
Maximum Power Dissipation | 62.5 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Length | 6.1mm |
Forward Diode Voltage | 1.2V |
Width | 5.35mm |
Transistor Material | Si |
Series | OptiMOS 3 |
Height | 1.1mm |
Typical Gate Charge @ Vgs | 9 nC @ 10 V |
Maximum Operating Temperature | +150 °C |