STMicroelectronics
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(Giá chưa VAT).0₫SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK STMicroelectronics SCTH50N120-7 [SCTH50N120-7]; 204-3953
STMicroelectronics.THÔNG SỐ KỸ THUẬT: Channel Type N Maximum Continuous Drain Current 55 A Maximum Drain Source Voltage 1200 V Package Type H2PA...
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(Giá chưa VAT).0₫SiC N-Channel SiC Power Module, 55 A, 1200 V, 7-Pin H2PAK STMicroelectronics SCTH50N120-7 [SCTH50N120-7]; 204-3954
STMicroelectronics.THÔNG SỐ KỸ THUẬT: Channel Type N Maximum Continuous Drain Current 55 A Maximum Drain Source Voltage 1200 V Package Type H2PA...
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(Giá chưa VAT).0₫Silicon carbide Power MOSFET 1200 V, 20 [SCT20N120H]; 201-4415
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Channel Type N Maximum Continuous Drain Current 20 A Maximum Drain Source Voltage 1200 V Package Type H2PAK-2 Pin...
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(Giá chưa VAT).0₫Silicon carbide Power MOSFET 1200 V, 20 [SCT20N120H]; 201-4416
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Channel Type N Maximum Continuous Drain Current 20 A Maximum Drain Source Voltage 1200 V Package Type H2PAK-2 Pin...
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(Giá chưa VAT).0₫Silicon Controlled Rectifier 1200V, 25 50mA [TN4050-12WL]; 206-8636
STMicroelectronics.THÔNG SỐ KỸ THUẬT: Rated Average On-State Current 25 Thyristor Type SCR Package Type TO-247 Repetitive Peak Reverse Voltage 1...
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(Giá chưa VAT).0₫Silicon Controlled Rectifier 1200V, 38 50mA [TN6050-12WL]; 206-8637
STMicroelectronics.THÔNG SỐ KỸ THUẬT: Rated Average On-State Current 38 Thyristor Type SCR Package Type TO-247 Repetitive Peak Reverse Voltage 1...
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(Giá chưa VAT).0₫Silicon Controlled Rectifier 1200V, 38 50mA [TN6050HP-12WY]; 206-8638
STMicroelectronics.THÔNG SỐ KỸ THUẬT: Rated Average On-State Current 38 Thyristor Type SCR Package Type TO-247 Repetitive Peak Reverse Voltage 1...
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(Giá chưa VAT).0₫SLLIMM 2nd series IPM, 3-phase inverter, [STGIB10CH60TS-X]; 201-4438
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Transistor Configuration Isolated Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage 5V Number of...
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(Giá chưa VAT).0₫SLLIMM 2nd series IPM, 3-phase inverter, [STGIB10CH60TS-X]; 201-4439
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Transistor Configuration Isolated Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage 5V Number of...
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(Giá chưa VAT).0₫SLLIMM 2nd series IPM, 3-phase inverter, [STGIB15CH60TS-X]; 201-4421
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Transistor Configuration Isolated Maximum Collector Emitter Voltage 600 V Number of Transistors 6 Maximum Gate Emit...
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(Giá chưa VAT).0₫SLLIMM 2nd series IPM, 3-phase inverter, [STGIB15CH60TS-X]; 201-4422
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Transistor Configuration Isolated Maximum Collector Emitter Voltage 600 V Maximum Gate Emitter Voltage 5V Number of...
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(Giá chưa VAT).0₫SMA4F10A, TVS Diodes [SMA4F10A]; 192-3835
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Diode Configuration Single Direction Type Uni-Directional Maximum Clamping Voltage 17 V, 21.7 V Minimum Breakdown V...
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(Giá chưa VAT).0₫SMA4F10A, TVS Diodes [SMA4F10A]; 192-4304
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Direction Type Uni-Directional Diode Configuration Single Maximum Clamping Voltage 17 V, 21.7 V Minimum Breakdown V...
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(Giá chưa VAT).0₫SMA4F10AY, TVS Diodes [SMA4F10AY]; 192-3836
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Direction Type Uni-Directional Diode Configuration Single Maximum Clamping Voltage 17 V, 21.7 V Minimum Breakdown V...
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(Giá chưa VAT).0₫SMA4F10AY, TVS Diodes [SMA4F10AY]; 192-4313
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Diode Configuration Single Direction Type Uni-Directional Maximum Clamping Voltage 17 V, 21.7 V Minimum Breakdown V...
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(Giá chưa VAT).0₫SMA4F11A, TVS Diodes [SMA4F11A]; 192-3837
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Direction Type Uni-Directional Diode Configuration Single Maximum Clamping Voltage 18 V, 24.2 V Minimum Breakdown V...
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(Giá chưa VAT).0₫SMA4F11A, TVS Diodes [SMA4F11A]; 192-4327
STMicroelectronics.THÔNG SỐ KỸ THUẬT:
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(Giá chưa VAT).0₫SMA4F11AY, TVS Diodes [SMA4F11AY]; 192-3838
STMicroelectronics.THÔNG SỐ KỸ THUẬT: Direction Type Uni-Directional Diode Configuration Single Maximum Clamping Voltage 24.2V Minimum Breakdown...
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(Giá chưa VAT).0₫SMA4F11AY, TVS Diodes [SMA4F11AY]; 192-4347
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Diode Configuration Single Direction Type Uni-Directional Maximum Clamping Voltage 18 V, 24.2 V Minimum Breakdown V...
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(Giá chưa VAT).0₫SMA4F12A, TVS Diodes [SMA4F12A]; 192-3839
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Direction Type Uni-Directional Diode Configuration Single Maximum Clamping Voltage 19.9 V, 25.3 V Minimum Breakdown...
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(Giá chưa VAT).0₫SMA4F12A, TVS Diodes [SMA4F12A]; 192-4360
STMicroelectronics.THÔNG SỐ KỸ THUẬT: Direction Type Uni-Directional Diode Configuration Single Maximum Clamping Voltage 25.3V Minimum Breakdown...
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(Giá chưa VAT).0₫SMA4F12AY, TVS Diodes [SMA4F12AY]; 192-3840
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Direction Type Uni-Directional Diode Configuration Single Maximum Clamping Voltage 19.9 V, 25.3 V Minimum Breakdown...
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(Giá chưa VAT).0₫SMA4F12AY, TVS Diodes [SMA4F12AY]; 192-4363
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Direction Type Uni-Directional Diode Configuration Single Maximum Clamping Voltage 19.9 V, 25.3 V Minimum Breakdown...
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(Giá chưa VAT).0₫SMA4F13A, TVS Diodes [SMA4F13A]; 192-3841
STMicroelectronicsTHÔNG SỐ KỸ THUẬT Diode Configuration Single Direction Type Uni-Directional Maximum Clamping Voltage 21.5 V, 27.2 V Minimum Breakdown...
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