![Vishay SiZF920DT-T1-GE3 1885009](http://nguyenxuong.com/cdn/shop/products/noImage_b10dafb6-ccd1-4b0c-a2e6-0dcf9b59e346_70x70.png?v=1594056313)
Dual N-Channel 30 V (D-S) MOSFET with Sc [SiZF920DT-T1-GE3]; 188-5009
by Vishay
0₫
Mã kho: 1885009
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 76 (Channel 1) A, 197 (Channel 2) A |
Maximum Drain Source Voltage | 30 (Channel 1) V, 30 (Channel 2) V |
Package Type | PowerPAIR 6 x 5 F |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 0.0014 (Channel 2) Ω, 0.005 (Channel 1) Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.2 (Channel 2) V, 2.4 (Channel 1) V |
Minimum Gate Threshold Voltage | 1.1 (Channel 1) V, 1.1 (Channel 2) V |
Maximum Power Dissipation | 28 (Channel 1) W, 74 (Channel 2) W |
Transistor Configuration | Dual |
Maximum Gate Source Voltage | -16 (Channel 1) V, -12 (Channel 2) V, +16 (Channel 2) V, +20 (Channel 1) V |
Number of Elements per Chip | 2 |
Width | 5.1mm |
Length | 6.1mm |
Maximum Operating Temperature | +150 °C |
Height | 0.7mm |
Minimum Operating Temperature | -55 °C |
Typical Gate Charge @ Vgs | 19 nC @ 15 V (Channel 1), 83 nC @ 15 V (Channel 2) |