EF Series Power MOSFET With Fast Body Di [SIHP22N60EF-GE3]; 188-4996
by Vishay
0₫
Mã kho: 1884996
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 19 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 182 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 179 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |
| Height | 9.01mm |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V |
| Width | 4.65mm |
| Minimum Operating Temperature | -55 °C |
| Length | 10.51mm |