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SIA921EDJ-T1-GE3 Dual P-Channel MOSFET, 4.5 A, 20 V, 6-Pin SOT-363 (SC-70) Vishay [SIA921EDJ-T1-GE3]; 814-1235
by Vishay
0₫
Mã kho: 8141235
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 4.5 A |
Maximum Drain Source Voltage | 20 V |
Package Type | SOT-363 (SC-70) |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 98 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 0.5V |
Maximum Power Dissipation | 7.8 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -12 V, +12 V |
Number of Elements per Chip | 2 |
Minimum Operating Temperature | -55 °C |
Height | 0.8mm |
Maximum Operating Temperature | +150 °C |
Length | 2.15mm |
Width | 2.15mm |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 15 nC @ 10 V |