![Vishay SIA429DJT-T1-GE3 8181450](http://nguyenxuong.com/cdn/shop/products/R8181450-01_7a5a8e38-f663-414c-a3bd-4e9181308a5e_443x444.jpg?v=1593755404)
SIA429DJT-T1-GE3 P-Channel MOSFET, 8.5 A, 20 V, 6-Pin PowerPAK SC-70 Vishay [SIA429DJT-T1-GE3]; 818-1450
by Vishay
0₫
Mã kho: 8181450
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 8.5 A |
Maximum Drain Source Voltage | 20 V |
Package Type | PowerPAK SC-70 |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 60 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 0.4V |
Maximum Power Dissipation | 19 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -8 V, +8 V |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Width | 2.15mm |
Height | 0.6mm |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 41 nC @ 8 V |
Length | 2.15mm |