SI7900AEDN-T1-GE3 Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay [SI7900AEDN-T1-GE3]; 165-6339
by Vishay
0₫
Mã kho: 1656339
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.25 |
| Maximum Drain Source Voltage | 20 V |
| Package Type | PowerPAK 1212 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 36 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 1.5 W |
| Transistor Configuration | Common Drain |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Height | 1.07mm |
| Minimum Operating Temperature | -55 °C |
| Width | 3.15mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 10.5 nC @ 4.5 V |
| Length | 3.15mm |