SI4599DY-T1-GE3 Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay [SI4599DY-T1-GE3]; 812-3233
by Vishay
0₫
Mã kho: 8123233
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 4.7 A, 6.8 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 42.5 mΩ, 62 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 3 W, 3.1 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Length | 5mm |
| Typical Gate Charge @ Vgs | 11.7 nC @ 10 V, 25 nC @ 10 V |
| Height | 1.55mm |
| Width | 4mm |
| Maximum Operating Temperature | +150 °C |