TK20E60W5,S1VX(S N-Channel MOSFET, 20 A, 600 V DTMOSIV, 3-Pin TO-220 Toshiba [TK20E60W5,S1VX(S]; 125-0549
by Toshiba
0₫
Mã kho: 1250549
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 20 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 175 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 165 W |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Width | 4.45mm |
Series | DTMOSIV |
Forward Diode Voltage | 1.7V |
Height | 15.1mm |
Maximum Operating Temperature | +150 °C |
Length | 10.16mm |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 55 nC @ 10 V |