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TK11Q65W,S1Q(S N-Channel MOSFET, 11.1 A, 650 V DTMOSIV, 3-Pin IPAK Toshiba [TK11Q65W,S1Q(S]; 125-0534
by Toshiba
0₫
Mã kho: 1250534
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THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 11.1 A |
Maximum Drain Source Voltage | 650 V |
Package Type | IPAK (TO-251) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 440 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 100 W |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Series | DTMOSIV |
Width | 2.3mm |
Height | 7.12mm |
Length | 6.65mm |
Forward Diode Voltage | 1.7V |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 25 nC @ 10 V |
Transistor Material | Si |