![Toshiba TK100E10N1,S1X(S 1250530](http://nguyenxuong.com/cdn/shop/products/R1250530-01_444x277.jpg?v=1593999615)
TK100E10N1,S1X(S N-Channel MOSFET, 207 A, 100 V U-MOSVIII-H, 3-Pin TO-220 Toshiba [TK100E10N1,S1X(S]; 125-0530
by Toshiba
0₫
Mã kho: 1250530
Liên hệ để có giá tốt (Vietnam: 0898.332.898, E-mail: SKF@nguyenxuong.com)
THÔNG SỐ KỸ THUẬT | |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 207 A |
Maximum Drain Source Voltage | 100 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 3.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 255 W |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Length | 10.16mm |
Width | 4.45mm |
Forward Diode Voltage | 1.2V |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 140 nC @ 10 V |
Series | U-MOSVIII-H |
Height | 15.1mm |