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STW11NM80 N-Channel MOSFET, 11 A, 800 V MDmesh, 3-Pin TO-247 STMicroelectronics [STW11NM80]; 103-1986
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Mã kho: 1031986
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THÔNG SỐ KỸ THUẬT | |
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Channel Type | N |
Maximum Continuous Drain Current | 0.458333333333333 |
Maximum Drain Source Voltage | 800 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 400 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 150 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 43.6 nC @ 10 V |
Series | MDmesh |
Minimum Operating Temperature | -65 °C |
Maximum Operating Temperature | +150 °C |
Length | 15.75mm |
Height | 20.15mm |
Transistor Material | Si |
Width | 5.15mm |